Realization and application of a 111 million pixel backside-illuminated detector and camera

摘要

A full-wafer, 10,580 $\times$ 10,560 pixel (95 $\times$ 95 mm) CCD wasdesigned and tested at Semiconductor Technology Associates (STA) with 9 umsquare pixels and 16 outputs. The chip was successfully fabricated in 2006 atDALSA and some performance results are presented here. This program was fundedby the Office of Naval Research through a Small Business Innovation in Research(SBIR) program requested by the U.S. Naval Observatory for its next generationastrometric sky survey programs. Using Leach electronics, low read-noise outputof the 111 million pixels requires 16 seconds at 0.9 MHz. Alternativeelectronics developed at STA allow readout at 20 MHz. Some modifications of thedesign to include anti-blooming features, a larger number of outputs, and useof p-channel material for space applications are discussed.